國產(chǎn)SiC碳化硅MOSFET功率器件可靠性及一致性如何確保？

電力電子系統(tǒng)研發(fā)制造商一般需要碳化硅MOSFET功率器件供應(yīng)商提供可靠性測試報告的原始數(shù)據(jù)和器件封裝的FT數(shù)據(jù)。

SiC碳化硅MOSFET可靠性報告原始數(shù)據(jù)主要來自以下可靠性測試環(huán)節(jié)的測試前后的數(shù)據(jù)對比，通過對齊可靠性報告原始數(shù)據(jù)測試前后漂移量的對比，從而反映器件的可靠性控制標(biāo)準(zhǔn)及真實的可靠性裕量。SiC碳化硅MOSFET可靠性報告原始數(shù)據(jù)主要包括以下數(shù)據(jù):

SiC碳化硅MOSFET高溫反偏High Temperature Reverse Bias HTRB Tj=175℃VDS=100%BV

SiC碳化硅MOSFET高溫柵偏（正壓）High Temperature Gate Bias（+） HTGB（+） Tj=175℃VGS=22V

SiC碳化硅MOSFET高溫柵偏（負(fù)壓）High Temperature Gate Bias（-） HTGB（-） Tj=175℃VGS=-8V

SiC碳化硅MOSFET高壓高濕高溫反偏High Voltage, High Humidity, High Temp. Reverse Bias HV-H3TRB Ta=85℃RH=85%VDS=80%BV

SiC碳化硅MOSFET高壓蒸煮Autoclave AC Ta=121℃RH=100%15psig

SiC碳化硅MOSFET溫度循環(huán)Temperature Cycling TC -55℃ to 150℃

SiC碳化硅MOSFET間歇工作壽命Intermittent Operational Life IOL △Tj≥100℃Ton=2minToff=2min

FT數(shù)據(jù)來自碳化硅MOSFET功率器件FT測試(Final Test，也稱為FT)是對已制造完成的碳化硅MOSFET功率器件進行結(jié)構(gòu)及電氣功能確認(rèn)，以保證碳化硅MOSFET功率器件符合系統(tǒng)的需求。

通過分析碳化硅MOSFET功率器件FT數(shù)據(jù)的關(guān)鍵數(shù)據(jù)（比如V(BR)DSS，VGS(th)，RDS(on)，

IDSS）的正態(tài)分布，可以定性碳化硅MOSFET功率器件材料及制程的穩(wěn)定性，這些數(shù)據(jù)的定性對電力電子系統(tǒng)設(shè)計及大批量制造的穩(wěn)定性也非常關(guān)鍵。

基本™（BASiC Semiconductor）第二代SiC碳化硅MOSFET兩大主要特色：

 

1.出類拔萃的可靠性：相對競品較為充足的設(shè)計余量來確保大規(guī)模制造時的器件可靠性。

基本™（BASiC Semiconductor）第二代SiC碳化硅MOSFET 1200V系列擊穿電壓BV值實測在1700V左右，高于市面主流競品，擊穿電壓BV設(shè)計余量可以抵御碳化硅襯底外延材料及晶圓流片制程的擺動，能夠確保大批量制造時的器件可靠性，這是基本™（BASiC Semiconductor）第二代SiC碳化硅MOSFET布袋除塵器關(guān)鍵的品質(zhì). 基本™（BASiC Semiconductor）第二代SiC碳化硅MOSFET雪崩耐量裕量相對較高，也增強了在電力電子系統(tǒng)應(yīng)用中的可靠性。

 

2.可圈可點的器件性能：同規(guī)格較小的Crss帶來出色的開關(guān)性能。

基本™（BASiC Semiconductor）第二代SiC碳化硅MOSFET反向傳輸電容Crss 在市面主流競品中是比較小的，帶來關(guān)斷損耗Eoff也是市面主流產(chǎn)品中非常出色的，優(yōu)于部分海外競品，特別適用于LLC應(yīng)用.

 

Basic™ (BASiC Semiconductor) second generation SiC silicon carbide MOSFET has two main features:

1. Outstanding reliability: Compared with competing products, there is sufficient design margin to ensure device reliability during mass manufacturing.

The breakdown voltage BV value of BASiC Semiconductor's second-generation SiC silicon carbide MOSFET 1200V series is measured to be around 1700V, which is higher than mainstream competing products on the market. The breakdown voltage BV design margin can withstand silicon carbide substrate epitaxial materials and wafers. The swing of the tape-out process can ensure device reliability during mass manufacturing, which is the most critical quality of BASiC Semiconductor’s second-generation SiC silicon carbide MOSFET. BASiC Semiconductor’s second-generation SiC silicon carbide MOSFET The relatively high avalanche tolerance margin also enhances reliability in power electronic system applications.

2. Remarkable device performance: Smaller Crss with the same specifications brings excellent switching performance.

BASiC Semiconductor's second-generation SiC silicon carbide MOSFET reverse transmission capacitor Crss is relatively small among mainstream competing products on the market, and its turn-off loss Eoff is also very good among mainstream products on the market, better than some overseas competing products. , especially suitable for LLC applications, typical applications such as charging pile power module downstream DC-DC applications.

 

Ciss：輸入電容（Ciss＝Cgd＋Cgs） ⇒柵極-漏極和柵極-源極電容之和：它影響延遲時間；Ciss越大，延遲時間越長?；?trade;（BASiC Semiconductor）第二代SiC碳化硅MOSFET 優(yōu)于主流競品。

Crss：反向傳輸電容（Crss＝Cgd） ⇒柵極-漏極電容：Crss越小，漏極電流上升特性越好，這有利于MOSFET的損耗，在開關(guān)過程中對切換時間起決定作用，高速驅(qū)動需要低Crss。

Coss：輸出電容（Coss＝Cgd＋Cds）⇒柵極-漏極和漏極-源極電容之和：它影響關(guān)斷特性和輕載時的損耗。如果Coss較大，關(guān)斷dv／dt減小，這有利于噪聲。但輕載時的損耗增加。

 

傾佳電子（Changer Tech）致力于國產(chǎn)碳化硅（SiC）MOSFET功率器件在電力電子市場的推廣！Changer Tech-Authorized Distributor of BASiC Semiconductor which committed to the promotion of BASiC™ silicon carbide (SiC) MOSFET power devices in the power electronics market!

 

 

基本™B2M第二代碳化硅MOSFET器件主要特色：

• 比導(dǎo)通電阻降低40%左右

• Qg降低了60%左右

• 開關(guān)損耗降低了約30%

• 降低Coss參數(shù)，更適合軟開關(guān)

• 降低Crss，及提高Ciss/Crss比值,降低器件在串?dāng)_行為下誤導(dǎo)通風(fēng)險

• 最大工作結(jié)溫175℃• HTRB、 HTGB+、 HTGB-可靠性按結(jié)溫Tj=175℃通過測試

• 優(yōu)化柵氧工藝，提高可靠性

• 高可靠性鈍化工藝

• 優(yōu)化終端環(huán)設(shè)計，降低高溫漏電流

• AEC-Q101